| MRC |
Requirement Statement |
Characteristics |
| AYQS |
TERMINAL CIRCLE DIAMETER |
0.200 INCHES NOMINAL ALL TRANSISTOR |
| ABBH |
INCLOSURE MATERIAL |
METAL ALL TRANSISTOR |
| ALAS |
INTERNAL CONFIGURATION |
JUNCTION CONTACT ALL TRANSISTOR |
| ASDD |
COMPONENT FUNCTION RELATIONSHIP |
MATCHED |
| CTRD |
POWER RATING PER CHARACTERISTIC |
600.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR |
| CTSG |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT |
175.0 DEG CELSIUS JUNCTION ALL TRANSISTOR |
| ABHP |
OVERALL LENGTH |
0.250 INCHES NOMINAL ALL TRANSISTOR |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR |
| TTQY |
TERMINAL TYPE AND QUANTITY |
3 UNINSULATED WIRE LEAD ALL TRANSISTOR |
| ADAV |
OVERALL DIAMETER |
0.357 INCHES NOMINAL ALL TRANSISTOR |
| ALBA |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE |
COLLECTOR ALL TRANSISTOR |
| ASKA |
COMPONENT NAME AND QUANTITY |
2 TRANSISTOR |
| AXGY |
MOUNTING METHOD |
TERMINAL ALL TRANSISTOR |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON ALL TRANSISTOR |
| ASCQ |
INTERNAL JUNCTION CONFIGURATION |
PNP ALL TRANSISTOR |
| ALAZ |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION |
TO-5 ALL TRANSISTOR |
| ABJT |
TERMINAL LENGTH |
0.500 INCHES MINIMUM ALL TRANSISTOR |
