| MRC |
Requirement Statement |
Characteristics |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
450.0 MILLIWATTS |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| TTQY |
TERMINAL TYPE AND QUANTITY |
14 FLAT LEADS |
| CQZP |
INPUT CIRCUIT PATTERN |
8 INPUT |
| CQSZ |
INCLOSURE CONFIGURATION |
FLAT PACK |
| SR-5 |
MANUFACTURERS CODE |
1VPW8 |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| CQWX |
OUTPUT LOGIC FORM |
CURRENT-MODE LOGIC |
| CZEQ |
TIME RATING PER CHACTERISTIC |
10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| TEST |
TEST DATA DOCUMENT |
94990-12-37300B DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| CZER |
MEMORY DEVICE TYPE |
DIODE MATRIX |
| SR-5 |
THE MANUFACTURERS DATA |
|
| AFGA |
OPERATING TEMP RANGE |
-55.0 TO 125.0 DEG CELSIUS |
| ADAQ |
BODY LENGTH |
0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| SR-5 |
DESIGN CONTROL REFERENCE |
51-37356B01 |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
25.0 VOLTS MAXIMUM POWER SOURCE |
| AFJQ |
STORAGE TEMP RANGE |
-65.0 TO 150.0 DEG CELSIUS |
| ADAT |
BODY WIDTH |
0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| ADAU |
BODY HEIGHT |
0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND PROGRAMMABLE AND PROGRAMMED |
