| MRC |
Requirement Statement |
Characteristics |
| CTSG |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT |
200.0 DEG CELSIUS JUNCTION |
| TTQY |
TERMINAL TYPE AND QUANTITY |
8 UNINSULATED WIRE LEAD |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
30.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL SEMICONDUCTOR |
| ABJT |
TERMINAL LENGTH |
0.500 INCHES MINIMUM |
| CTRD |
POWER RATING PER CHARACTERISTIC |
250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION 1ST TRANSISTOR 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION 2ND TRANSISTOR 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
| AXGY |
MOUNTING METHOD |
TERMINAL |
| ALAZ |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION |
TO-71 |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED CASE |
| ASKA |
COMPONENT NAME AND QUANTITY |
2 TRANSISTOR |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON ALL TRANSISTOR |
| AYQS |
TERMINAL CIRCLE DIAMETER |
0.100 INCHES NOMINAL |
| ABHP |
OVERALL LENGTH |
0.210 INCHES MAXIMUM |
| ADAV |
OVERALL DIAMETER |
0.230 INCHES MAXIMUM |
| ABBH |
INCLOSURE MATERIAL |
METAL |
